常用于晶振產(chǎn)品的當(dāng)屬電子產(chǎn)品，作為電子產(chǎn)品與晶振的關(guān)系，相當(dāng)于第二個(gè)靈魂，也是元器件中缺一不可的配件，當(dāng)下市場(chǎng)中最常用到晶振產(chǎn)品的就有手機(jī)，藍(lán)牙，通信設(shè)備等領(lǐng)域，而晶振中又可分為進(jìn)口晶振和國(guó)產(chǎn)晶振，進(jìn)口晶振在價(jià)格上面沒(méi)有太大優(yōu)勢(shì)，性能較于國(guó)產(chǎn)晶振更加出色.隨著國(guó)家大力發(fā)展半導(dǎo)體和國(guó)內(nèi)研發(fā)實(shí)力的提升，我們的有源晶振已不遜色于進(jìn)口的頂級(jí)產(chǎn)品，甚至在某些地方還要更勝一籌。EPSON進(jìn)口有源晶振價(jià)格趨勢(shì)由什么決定?X1G005601006900

石英晶體振蕩器的應(yīng)用：1、石英鐘走時(shí)準(zhǔn)、耗電省、經(jīng)久耐用為其最大優(yōu)點(diǎn)。不論是老式石英鐘或是新式多功能石英鐘都是以石英晶體振蕩器為核心電路，其頻率精度決定了電子鐘表的走時(shí)精度。石英晶體振蕩器原理的示意所示，其中V1和V2構(gòu)成CMOS反相器石英晶體Q與振蕩電容C1及微調(diào)電容C2構(gòu)成振蕩系統(tǒng)，這里石英晶體相當(dāng)于電感。振蕩系統(tǒng)的元件參數(shù)確定了振頻率。一般Q、C1及C2均為外接元件。另外R1為反饋電阻，R2為振蕩的穩(wěn)定電阻，它們都集成在電路內(nèi)部。故無(wú)法通過(guò)改變C1或C2的數(shù)值來(lái)調(diào)整走時(shí)精度。但此時(shí)仍可用加接一只電容C有方法，來(lái)改變振蕩系統(tǒng)參數(shù)，以調(diào)整走時(shí)精度。

Product Number	愛(ài)普生晶振型號(hào)	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005601006700	SG-8018CG	7.372800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601006800	SG-8018CG	11.520000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601006900	SG-8018CG	8.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601007000	SG-8018CG	13.333000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601007100	SG-8018CG	28.636360 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601007200	SG-8018CG	44.236800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601007300	SG-8018CG	130.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 8.1 mA
X1G005601007400	SG-8018CG	8.192000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601007500	SG-8018CG	2.097152 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601007600	SG-8018CG	49.824000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601007700	SG-8018CG	133.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 8.1 mA
X1G005601007800	SG-8018CG	19.200000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601007900	SG-8018CG	41.439990 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601008000	SG-8018CG	16.608000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601008100	SG-8018CG	33.333000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601008200	SG-8018CG	7.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601008300	SG-8018CG	33.176000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601008400	SG-8018CG	33.333000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601008500	SG-8018CG	7.372800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601008600	SG-8018CG	4.800000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA

EPSON進(jìn)口有源晶振價(jià)格趨勢(shì)由什么決定?X1G005601006900，根據(jù)電子鐘表走時(shí)的快慢，調(diào)整電容有兩種接法：若走時(shí)偏快，則可在石英晶體兩端并接電容C。此時(shí)系統(tǒng)總電容加大，振蕩頻率變低，走時(shí)減慢。若走時(shí)偏慢，則可在晶體支路中串接電容C。此時(shí)系統(tǒng)的總電容減小，振蕩頻率變高，走時(shí)增快。只要經(jīng)過(guò)耐心的反復(fù)試驗(yàn)，就可以調(diào)整走時(shí)精度。因此，晶振可用于時(shí)鐘信號(hào)發(fā)生器。2、隨著電視技術(shù)的發(fā)展，近 來(lái) 彩電多采用500kHz或503kHz的晶體振蕩器作為行、場(chǎng)電路的振蕩源，經(jīng)1/3的分頻得到15625Hz的行頻，其穩(wěn)定性和可靠性大為提高。而且晶振價(jià)格便宜，更換容易，也許會(huì)有人好奇，進(jìn)口有源晶振價(jià)格趨勢(shì)由什么決定呢，往往由于市場(chǎng)的需求量決定其當(dāng)前的價(jià)值，所以產(chǎn)品成為稀缺，價(jià)格也會(huì)出現(xiàn)上漲趨勢(shì)。

Product Number	愛(ài)普生晶振型號(hào)	Frequency	LxWxH	Output Wave	Supply Voltage	Ope Temperature	Freq. Tol.	I [Max]
X1G005601008700	SG-8018CG	18.400000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601008800	SG-8018CG	4.915200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601008900	SG-8018CG	133.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 8.1 mA
X1G005601009000	SG-8018CG	2.800000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601009100	SG-8018CG	22.579200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601009200	SG-8018CG	0.680000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601009300	SG-8018CG	46.339200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601009400	SG-8018CG	60.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601009500	SG-8018CG	3.579545 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601009700	SG-8018CG	16.666600 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601009800	SG-8018CG	13.333333 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601009900	SG-8018CG	54.000000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601010000	SG-8018CG	3.686400 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005601010200	SG-8018CG	22.579200 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601010300	SG-8018CG	64.478100 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601010400	SG-8018CG	59.737100 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601010500	SG-8018CG	64.342677 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA
X1G005601010600	SG-8018CG	43.540157 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601010700	SG-8018CG	25.600000 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005601010800	SG-8018CG	19.660800 MHz	2.50 x 2.00 x 0.80 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA

愛(ài)普生推出了SG-8018CG晶振，進(jìn)口有源晶振，編碼X1G005601006900，頻率8.000000兆赫，輸出WaveCMOS，供電電壓1.62至3.63 V，尺寸(長(zhǎng)×寬×高)2.50 × 2.00 × 0.80毫米，工作溫度-40到+105°C，頻率公差±50ppm，額外的OptionsN /，OSC TypeProgrammable Clock時(shí)鐘OSC.

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